Semiconductor integrated circuit device with reduc

专利名称：Semiconductor integrated circuit device with

reduced leakage current

发明人：Kenichi Osada,Koichiro Ishibashi,Yoshikazu

Saitoh,Akio Nishida,Masaru Nakamichi,NaokiKitai

申请号：US13352142申请日：20120117公开号：US08232589B2公开日：20120731

专利附图：

摘要：The gate tunnel leakage current is increased in the up-to-date process, so that

it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by abattery for use in a cellular phone and which needs to be in a standby mode at a lowleakage current. In a semiconductor integrated circuit device, the ground sourceelectrode lines of logic and memory circuits are kept at a ground potential in an activemode, and are kept at a voltage higher than the ground potential in an unselectedstandby mode. The gate tunnel leakage current can be reduced without destroying data.

申请人：Kenichi Osada,Koichiro Ishibashi,Yoshikazu Saitoh,Akio Nishida,MasaruNakamichi,Naoki Kitai

地址：Kawasaki JP,Warabi JP,Hamura JP,Tachikawa JP,Hitachinaka JP,Fussa JP

国籍：JP,JP,JP,JP,JP,JP

代理机构：Stites & Harbison, PLLC

代理人：Juan Carlos A. Marquez, Esq

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